SK hynix Inc. has unveiled its new UFS 4.1 solution product, which incorporates the world’s highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications. This development addresses the increasing demand for high performance and low power NAND solutions to ensure stable operation of on-device AI. The company anticipates that this product, optimized for AI workload, will bolster its leadership in the flagship smartphone markets.
The mobile market’s growing focus on on-device AI emphasizes the need for a balance between computational capabilities and battery efficiency. In response, SK hynix has introduced a product with a 7% improvement in power efficiency compared to its predecessor based on 238-high NAND. Additionally, the thickness has been reduced from 1mm to 0.85mm to accommodate ultra-slim smartphones.
The new UFS 4.1 solution supports data transfer speeds of up to 4300MB/s, marking it as the fastest sequential read speed for a fourth-generation UFS. It also enhances multitasking performance by improving random read and write speeds by 15% and 40%, respectively. These improvements are expected to enhance user experience by providing immediate data access for on-device AI and faster application responsiveness.
SK hynix plans to achieve customer qualification within this year and commence volume shipments in the first quarter of next year. The product will be available in two capacities: 512 GB and 1TB.
Ahn Hyun, President and Chief Development Officer at SK hynix, stated that they plan to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. “We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge,” he said.
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